? 2007 ixys corporation, all rights reserved genx3 tm 300v igbt IXGH100N30C3 (tab) high speed pt igbts for 50-150khz switching preliminary technical information v ces = 300v i c110 = 100a v ce(sat) 1.85v t fi typ = 94ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 300 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces 50 a v ge = 0v t j = 125 c 1.0 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 100a, v ge = 15v 1.53 1.85 v t j = 125 c 1.59 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 300 v v cgr t j = 25 c to 150 c, r ge = 1m ? 300 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c (chip capability) 100 a i cm t c = 25 c, 1ms 500 a i a t c = 25 c 100 a e as t c = 25 c 500 mj ssoa v ge = 15v, t vj = 125 c, r g = 2 ? i cm = 200 a (rbsoa) clamped inductive load @ 300v p c t c = 25 c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g ds99877a(01/08) g c e to-247 (ixgh) g = gate c = collector e = emitter tab = collector features z high frequency igbt z square rbsoa z high avalanche capability z drive simplicity with mos gate turn-on z high current handling capability applications z pfc circuits z pdp systems z switched-mode and resonant-mode converters and inverters z smps z ac motor speed control z dc servo and robot drives z dc choppers
ixys reserves the right to change limits, test conditions, and dimensions. IXGH100N30C3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, 40 75 s pulse test, t 300 s; duty cycle, d 2%. c ies 6300 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 435 pf c res 115 pf q g 162 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 27 nc q gc 60 nc t d(on) 23 ns t ri 38 ns e on 0.23 mj t d(off) 105 160 ns t fi 94 ns e off 0.52 0.9 mj t d(on) 24 ns t ri 37 ns e on 0.35 mj t d(off) 131 ns t fi 113 ns e off 0.75 mj r thjc 0.27 c/w r thck 0.21 c/w inductive load, t j = 125 c i c = 50a, v ge = 15v v ce = 200v, r g = 2 ? ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p inductive load, t j = 25 c i c = 50a, v ge = 15v v ce = 200v, r g = 2 ? preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2007 ixys corporation, all rights reserved IXGH100N30C3 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0123456 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 200 0 0.4 0.8 1.2 1.6 2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 200a i c = 100a i c = 50a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 200a 100a 50a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4 4.5 5 5.5 6 6.5 7 7.5 8 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH100N30C3 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 50 100 150 200 250 300 350 v ce - volts i c - amperes t j = 125oc r g = 2 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20406080100120140160 q g - nanocoulombs v ge - volts v ce = 150v i c = 100a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2007 ixys corporation, all rights reserved IXGH100N30C3 fig. 12. inductive switching energy loss vs. gate resistance 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 2345678910 r g - ohms e off - millijoules 0.1 0.2 0.3 0.4 0.5 0.6 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 200v i c = 50a i c = 25a fig. 17. inductive turn-off switching times vs. junction temperature 60 70 80 90 100 110 120 130 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 100 105 110 115 120 125 130 135 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 200v i c = 50a, 25a fig. 15. inductive turn-off switching times vs. gate resistance 100 110 120 130 140 150 160 2345678910 r g - ohms t f - nanoseconds 120 160 200 240 280 320 360 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 200v i c = 50a i c = 25a fig. 13. inductive swiching energy loss vs. collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 30 35 40 45 50 55 60 65 70 75 i c - amperes e off - millijoules 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 200v t j = 125oc, 25oc fig. 14. inductive swiching energy loss vs. junction temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.1 0.2 0.3 0.4 0.5 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 200v i c = 50a i c = 25a fig. 16. inductive turn-off switching times vs. collector current 40 60 80 100 120 140 160 180 25 30 35 40 45 50 55 60 65 70 75 i c - amperes t f - nanoseconds 100 105 110 115 120 125 130 135 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 200v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH100N30C3 ixys ref: g_100n30c3(75)8-17-07 fig. 19. inductive turn-on switching times vs. collector current 10 15 20 25 30 35 40 45 50 55 60 65 70 25 30 35 40 45 50 55 60 65 70 75 i c - amperes t r - nanoseconds 18 20 22 24 26 28 30 t d(on) - nanoseconds t r t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 200v t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 10 15 20 25 30 35 40 45 50 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 18 19 20 21 22 23 24 25 26 t d(on) - nanoseconds t r t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 200v i c = 25a i c = 50a fig. 18. inductive turn-on switching times vs. gate resistance 15 20 25 30 35 40 45 50 55 60 2345678910 r g - ohms t r - nanoseconds 16 18 20 22 24 26 28 30 32 34 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 200v i c = 25a i c = 50a
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